EABS1D - eabs1j creat by art - ideal for automated placement, for compact pcb design - high surge current capability - ultrafast reverse recovery time for high frequency - negligible leakage current - halogen-free according to iec 61249-2-21 general purpose rectification for ac/dc bridge full wave rectification for smps. pfc function for led lighting ballast. also suitable for secondary stage of molding compound, ul flammability classification rating 94v-0 part no. with suffix "h" means aec-q101 qualified packing code with suffix "g" means green compound (halogen-free) terminal: matte tin plated leads, solderable per jesd22-b102 meet jesd 201 class 2 whisker test symbol unit v rrm v v rms v v dc v i f(av) a i 2 ta 2 s t rr ns t j c t stg c note 2: reverse recovery test conditions: i f =0.5a, i r =1.0a, i rr =0.25a document number: ds_d1403002 version: b15 v a 400 600 EABS1D eabs1g eabs1j 1 1 200 - 55 to +150 features abs weight: 0.09 g (approximately) case: molded plastic body maximum average forward rectified current parameter polarity: polarity as marked on the body 40 1a, 200v - 600v miniature ultrafast glass passivated brid g e rectifiers mechanical data - compliant to rohs directive 2011/65/eu and in accordance to weee 2002/96/ec typical applications high frequency inverters. taiwan semiconductor note 1: pulse test with pw=300 s, 1% duty cycle operating junction temperature range storage temperature range a 35 200 typical thermal resistance i r 6.64 - 55 to +150 c/w 25 80 peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load i fsm v f 1.70 maximum reverse recovery time (note 2) r jl r ja rating for fusing (t<8.3ms) 0.95 600 280 420 140 maximum repetitive peak reverse voltage maximum rms voltage moisture sensitivity level: level 1, per j-std-020 maximum reverse current @ rated v r t j =25c t j =125c 200 400 maximum instantaneous forward voltage (note 1) i f = 1 a maximum dc blocking voltage maximum ratings and electrical characteristics (t a =25c unless otherwise noted) 1.20
part no. note 2: whole series with green compound part no. (t a =25c unless otherwise noted) document number: ds_d1403002 version: b15 ratings and characteristics curves preferred p/n 5,000 / 13" paper reel EABS1D - eabs1j taiwan semiconductor part no. suffix ordering information packing code packing code suffix h re g abs rg abs description 1,000 / 7" plastic reel packing part no. suffix packing code packing code suffix package example note 1: "x" defines voltage from 200v (EABS1D) to 600v (eabs1j) eabs1x (note 1) EABS1Dhreg EABS1D h re g aec-q101 qualified green compound 0 0.2 0.4 0.6 0.8 1 1.2 0 25 50 75 100 125 150 average forward current (a) ambient temperature ( c) fig.1 maximum forward current derating curve 0 10 20 30 40 50 110100 peak forward surge current (a) number of cycles at 60 hz fig. 3 maximum non-repetitive forward surge current 8.3ms single half sine-wave 0.01 0.1 1 10 100 0 20406080100 instantaneous reverse current ( a) percent of rated peak reverse voltage(%) fig. 2 typical reverse characteristics t j =25 c t j =125 c 1 10 100 0.1 1 10 100 junction capacitance (pf) a reverse voltage (v) fig. 4 typical junction capacitance
min max min max b 4.30 4.50 0.169 0.177 c 6.25 6.65 0.246 0.262 d 0.60 0.70 0.024 0.028 e 3.90 4.10 0.154 0.161 f 4.90 5.10 0.193 0.200 g 1.40 1.60 0.055 0.063 h 1.35 1.45 0.053 0.057 i 0.05 0.15 0.002 0.006 j 0.30 0.70 0.012 0.028 k 0.15 0.25 0.006 0.010 p/n = specific device code yw = date code f = factory code document number: ds_d1403002 version: b15 marking diagram d7.22 e2.05 f5.72 b0.9 unit (inch) 0.059 0.035 c4.22 unit (inch) suggested pad layout symbol unit (mm) a1.5 abs 0.166 0.284 0.081 0.225 EABS1D - eabs1j taiwan semiconductor package outline dimensions dim. unit (mm) 0.1 1 10 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 instantaneous forward current (a) forward voltage (v) fig. 5 typical forward characteristics t j =25 c t j =125 c
creat by art assumes no responsibility or liability for any errors or inaccuracies. information contained herein is intended to provide a product description only. no license, express or implied, to any intellectual property rights is granted by this document. except as provided in tsc's terms and conditions of sale for such products, tsc assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of tsc products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. the products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify tsc for any damages resulting from such improper use or sale. document number: ds_d1403002 version: b15 EABS1D - eabs1j taiwan semiconductor notice specifications of the products displayed herein are subject to change without notice. tsc or anyone on its behalf,
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